| PART |
Description |
Maker |
| 2N1080 2N5409 2N2202 2N4350 2N4242 2N3142 2N3141 2 |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-53
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 5A I(C) | TO-111
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | PNP | 70V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | NPN | 65V V(BR)CEO | 2A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 65V V(BR)CEO | 2A I(C) | STR-10
68HC11/Bidirectional-Compatible µP Reset Circuit
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 5A I(C) | TO-36
Open-Drain SOT µP Reset Circuit
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1A I(C) | CAN
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-53
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 5A I(C) | TO-5
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-210AC
晶体管|晶体管|进步党| 60V的五（巴西）总裁| 60mA的一（c）|1
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 350MA I(C) | TO-5 晶体管|晶体管|叩| 40V的五（巴西）总裁| 350mA的一（c）|
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 10A I(C) | STR-1/4 晶体管|晶体管|叩| 50V五（巴西）总裁| 10A条一（c）|个STR - 1 / 4
Open-Drain SOT µP Reset Circuit
|
Winbond Electronics, Corp.
|
| 2SD2115S 2SD2115L |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-252AA
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-251AA 晶体管|晶体管|叩| 60V的五（巴西）总裁| 5A条一（c）|51AA
|
Intersil, Corp.
|
| 2SC3599D 2SC3596E 2SC3597E 2SA1849D 2SA1403C 2SC44 |
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 300MA I(C) | TO-126
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 500MA I(C) | TO-126
TRANSISTOR | BJT | PNP | 70V V(BR)CEO | 500MA I(C) | SIP
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 500MA I(C) | TO-220AB
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 200MA I(C) | TO-126
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 300MA I(C) | TO-126 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 300mA的一（c）|26
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管| npn型| 120伏特五（巴西）总裁| 200mA的一（c）|26
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 500MA I(C) | SIP 晶体管|晶体管|叩| 70V的五（巴西）总裁| 500mA的一（c）|园区
|
Advanced Interconnections, Corp.
Electronic Theatre Controls, Inc.
Sanyo Electric Co., Ltd.
|
| CDD2061D CDD2061 |
2.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 500 hFE.
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220AB 晶体管|晶体管|叩| 60V的五（巴西）总裁| 3A条一（c）| TO - 220AB现有
|
Continental Device India Limited
|
| MMST5086 MMST5087 MMST5088 MMST5089 MMST7157 SST71 |
TRANSISTOR | BJT | DARLINGTON | NPN | 40V V(BR)CEO | 500MA I(C) | SOT-23 晶体管|晶体管|达林顿|叩| 40V的五（巴西）总裁| 500mA的一（c）| SOT - 23封装
EZ-USB SX2™ High-Speed USB Interface Device
KIT EZ-USB SX2 DEVELOPMENT
IC, STATIC RAM, 512K X 8
TRANSISTOR | BJT | DARLINGTON | NPN | 30V V(BR)CEO | 500MA I(C) | SOT-23
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 200MA I(C) | SOT-23
TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 500MA I(C) | SOT-23
Low-Cost 3.3V Zero Delay Buffer
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 50MA I(C) | SOT-23VAR
PCIX I/O System Clock Generator with EMI Control Features
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 200MA I(C) | SOT-23
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 600MA I(C) | SOT-23
4-Mbit (128K x 36) Pipelined Sync SRAM
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL™ Architecture
KIT DEVELOPMENT EZ-USB FX2LP
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 200MA I(C) | SOT-23VAR
TRANSISTOR|BJT|NPN|25VV(BR)CEO|200MAI(C)|SOT-23VAR
TRANSISTOR|BJT|NPN|30VV(BR)CEO|200MAI(C)|SOT-23VAR
TRANSISTOR|BJT|PNP|50VV(BR)CEO|200MAI(C)|SOT-23VAR
|
|
| BD179-6 BD175-16 BD178-6 |
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-126
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 3A I(C) | TO-126
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-126 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 3A条一（c）|26
|
Motorola Mobility Holdings, Inc.
|
| 2SD2396 D2396 2SD2396H |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220VAR 晶体管|晶体管|叩| 60V的五（巴西）总裁| 3A条一（c）|20VAR
Low Frequency Transistor (60V, 3A)
Low Frequency Transistor (60V/ 3A)
|
PCA Electronics, Inc.
Rohm CO.,LTD.
|
| PZT651T1/D PZT651T3 |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 2A I(C) | TO-261AA
NPN Silicon Planar Epitaxial Transistor NPN硅外延平面晶体管
|
HIROSE ELECTRIC Co., Ltd.
|
| 2SD1691 2SD1691L |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-126
NPN SILICON POWER TRANSISTOR
|
NEC Corp.
NEC[NEC]
|
| FXT2907SM FXT605SM |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 600MA I(C) | SO
TRANSISTOR | BJT | DARLINGTON | NPN | 120V V(BR)CEO | 1A I(C) | SO 晶体管|晶体管|达林顿| npn型| 120伏特五（巴西）总裁| 1A条一（c）|
|
Electronic Theatre Controls, Inc.
|
| 2SD2403 2SD2403GZ 2SD2403-GX-AZ |
NPN epitaxial type silicon transistor
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-243 晶体管|晶体管|叩| 60V的五（巴西）总裁| 3A条一（c）|43
3 A, 60 V, NPN, Si, POWER TRANSISTOR
|
NEC[NEC]
NEC, Corp.
NEC Corp.
|
| 2SD1776P 2SD1776AP 2SD1776AO 2SD1776AQ 2SD1776O |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 2A I(C) | SOT-186
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 2A I(C) | SOT-186
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管|晶体管|叩| 60V的五（巴西）总裁|甲一（c）|的SOT - 186
|
NEC, Corp.
|
